4.7 Article

Atomic layer deposition of GDC cathodic functional thin films for oxide ion incorporation enhancement

期刊

JOURNAL OF THE AMERICAN CERAMIC SOCIETY
卷 104, 期 1, 页码 86-95

出版社

WILEY
DOI: 10.1111/jace.17457

关键词

atomic layer deposition; functional interlayer; Gadolinia-doped ceria; low-temperature solid oxide fuel cells; oxide ion incorporation

资金

  1. National Research Foundation of Korea [2012R1A6A1029029, 2017R1D1A1A09000586]
  2. National Research Foundation of Korea [2017R1D1A1A09000586] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

This paper reports the successful fabrication of a GDC thin film using ALD for enhancing the performance of SOFCs. By controlling the doping ratio and adjusting the ALD supercycle configuration, the morphology, crystallinity, and chemical composition of the ALD GDC thin films were analyzed. The application of ALD GDC in a SOFC led to a significant enhancement in output power density, with a TF-SOFC achieving a high power density of 288.24 mW/cm^2 at 450 degrees C.
In this paper, we report successful fabrication of a gadolinia-doped ceria (GDC) thin film using atomic layer deposition (ALD) for improving the performance of solid oxide fuel cells (SOFCs). By varying the deposition conditions and adjusting the configuration of the ALD supercycle, the doping ratio of ALD GDC was controlled. The morphology, crystallinity, and chemical composition of ALD GDC thin films were analyzed. ALD GDC showed different surface chemistry, including oxidation states, at different doping ratios. The application of ALD GDC in a SOFC led to an output power density enhancement greater than 2.5 times. With an anodic aluminum oxide (AAO) porous support structure, an ALD GDC thin film SOFC (TF-SOFC) showed a high power density of 288.24 mW/cm(2)at an operating temperature of 450 degrees C.

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