期刊
JOURNAL OF PHYSICS-CONDENSED MATTER
卷 33, 期 11, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-648X/abba66
关键词
bandgap modulation; strain; electric field; first-principles
资金
- National Natural Science Foundation of China [11004009]
Bulk GeSe is an indirect bandgap semiconductor. However, direct bandgap semiconductor of two-dimensional GeSe can be obtained by applying strain along armchair direction, and the direct bandgap can be tuned in a wide energy range from 0.86 eV to 0.00 eV by electric field. The bandgap modulation mechanism is studied in detail by first-principle calculations. The calculations of phonon spectra show that the crystal structure is relatively stable under the strain and electric field. Therefore, 2D GeSe is a promising material in frequency adjustable electronic and optical devices.
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