Temperature-dependent characteristics of Schottky barrier diode on heterogeneous β-Ga2O3((2)over-bar01)-Al2O3-Si Substrate

We report the beta-Ga2O3((2) over bar 01)/TiN Schottky barrier diode (SBD) on heterogeneous integrated Ga2O3-Al2O3-Si (GaOISi) substrate. The interface performance of GaOISi/TiN SBD and its dependence on the ambient temperature (T-amb) are characterized. The measured capacitance (C) versus voltage (V) curves are not influenced by the frequency and the ambient temperature, which indicate a stable interface between Ga2O3 and TiN. The SBD on GaOISi demonstrates a high on-state to off-state current (I-ON/I-OFF) ratio of 10(11), a low R-ON of 6.7 m Omega center dot cm(2), and an on-set voltage full switch-on voltage V-on of similar to 1.1 V. As the temperature increases from 25 degrees C to 130 degrees C, the GaOISi/TiN SBD exhibits a stable I-ON/I-OFF ratio. Based on the thermionic emission model, the extracted phi(B, eff) decreases from 0.92 to 0.75 eV with the increasing of temperature, which leads to a reduction of V-on.

Automated summary

The article reports on the interface performance of the beta-Ga2O3((2) over bar 01)/TiN Schottky barrier diode (SBD) on a heterogeneous integrated Ga2O3-Al2O3-Si (GaOISi) substrate. The SBD exhibits stable characteristics and consistent on-state to off-state current ratio at different temperatures. Additionally, the effective barrier height φ(B, eff) decreases with increasing temperature, leading to a decrease in V-on.