期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 53, 期 50, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/abb1e7
关键词
beta-Ga2O3; solar-blind ultraviolet photodetector; flexible; mica; high-temperature post annealing
资金
- National Natural Science Foundation of China [11675280, 11674405, 61874139, 11875088, 61904201]
In the present work, we report a flexible transparent beta-Ga2O3 solar-blind ultraviolet (UV) photodetector (PD) fabricated on a mica substrate. A laminated a-Ga2O3/Ga/a-Ga2O3 structure is thermally annealed at 1050 degrees C, forming a beta-Ga2O3 film incorporating Ga nanospheres. A PD based on this nanocomposite film has a spectrum response peak at 250 nm, an extremely low dark current of 0.6 pA at a 10 V bias, a very high I-light/I(dark)ratio of 3 x 10(6), and a fast recovery speed of less than 50 ms. Robust flexibility is demonstrated by bending tests and 10 000 cycles of a fatigue test with a radius as small as 8 mm. Compared to a room-temperature-fabricated flexible amorphous Ga2O3(a-Ga2O3) PD, the flexible beta-Ga2O3PD on mica exhibits improved solar-blind UV photoresponse characteristics. The insertion of a gallium interlayer and treatment by high-temperature post annealing are proposed to contribute to a better stoichiometry and lattice order of the beta-Ga(2)O(3)thin film, as evidenced by the pronounced Raman peaks related to the Ga-I(O-I)(2) and GaIO4 vibration modes in beta-phase Ga2O3. Our research is believed to provide a simple and practical route to achieving flexible transparent beta-Ga2O3 solar-blind UV PDs, as well as other devices such as flexible transparent phototransistors and power rectifiers.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据