Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films

Hafnium oxide (HfO2), zirconium oxide (ZrO2), and the solid-solution (Hf1-xZrxO2) system continue to be some of the most relevant ferroelectric materials, in particular, for their promising application in CMOS integrated ferroelectric memories. Recent understanding of the influence of oxygen supplied during film deposition on the structural phase formation process in Hf1-xZrxO2 films has drawn attention to a commonly overlooked parameter for tuning ferroelectric and electrical properties of these films. In this paper, a comparison of O-3 and O-2 plasma used as the oxygen source in an atomic layer deposition process for Hf1-xZrxO2 films within the full compositional range is discussed. A combination of structural and electrical characterization methods grant insight on the influence of each of the oxygen sources on the crystalline phase formation during deposition of Hf1-xZrxO2 films. These observations are then correlated to the material's behavior regarding its ferroelectric and electrical properties; mainly, dielectric constant, ferroelectric remanent polarization, and number of electric field cycles to breakdown.

Automated summary

This paper discusses the comparison of O-3 and O-2 plasma used as the oxygen source in an atomic layer deposition process for Hf1-xZrxO2 films within the full compositional range. By combining structural and electrical characterization methods, insights are gained on the influence of each of the oxygen sources on the crystalline phase formation during deposition of Hf1-xZrxO2 films, and these observations are then correlated to the material's behavior regarding its ferroelectric and electrical properties.