期刊
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
卷 31, 期 23, 页码 21651-21660出版社
SPRINGER
DOI: 10.1007/s10854-020-04678-9
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资金
- Defence Research and Development organisation (DRDO), New Delhi [ERIP/ER/1604765/M/01/1683]
In this paper, we have prepared the lead-free piezoelectric BZT-xBCT (x = 0.48, 0.49, 0.50 and 0.51) polycrystalline compositions using solid-state reaction technique. Structural, microstructural and electrical properties were explored by changing the BCT concentration. Structural analysis shows the existence of morphotropic phase boundary in BZT-xBCT (x = 0.50) sample. The SEM micrographs illustrate the decrease in grain size with increase in the BCT concentration. The temperature-dependent dielectric behavior depicts high dielectric constant similar to 26,100 and low loss similar to 0.04 for BZT-0.48BCT composition at Curie temperature. The PE hysteresis loop shows the well-saturated hysteresis loops and low value of coercive field (E-C). The higher values of electromechanical planar coupling coefficient, K-P similar to 51.2%, piezoelectric coefficient, d(33) similar to 512 pC/N and bipolar strain (similar to 0.16%) were recorded for BZT-0.50BCT ceramic composition.
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