Dependence of laser parameters on structural properties of pulsed laser-deposited MoS2thin films applicable for field effect transistors

The pulsed laser deposition (PLD) technique can be efficient and cost-effective in the fabrication of high-quality MoS(2)thin films. The laser pulse parameters, such as the number of pulses, the pulse energy density, and the frequency, that influence the MoS(2)thin films quality have been investigated. The optimum parameters of laser pulse for the best crystalline quality MoS(2)films were determined by experiments. Back-gated field effect transistors (FETs) were fabricated based on the MoS(2)thin film. The carrier mobility of the MoS(2)back-gated FETs has reached 4.63 cm(2)V(-1) S-1. The responsivity of the MoS(2)back-gated FETs is approximately 0.06 AW(-1)at drain voltage of - 2 V. These results show that the back-gated FETs based on MoS(2)thin films prepared by PLD can be applied to photodetectors.