相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Long- range ordered vertical III- nitride nanocylinder arrays via plasma- assisted atomic layer deposition
Ali Haider et al.
JOURNAL OF MATERIALS CHEMISTRY C (2018)
A study of GaN nucleation and coalescence in the initial growth stages on nanoscale patterned sapphire substrates via MOCVD
Yifan Chen et al.
CRYSTENGCOMM (2018)
A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire
Yosuke Nagasawa et al.
APPLIED SCIENCES-BASEL (2018)
Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls
Jana Hartmann et al.
JOURNAL OF CRYSTAL GROWTH (2017)
Controllable synthesis of AlN nanostructures and their photoluminescence
Longhai Shen et al.
CRYSTENGCOMM (2017)
Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates
Donghyun Lee et al.
APPLIED PHYSICS LETTERS (2017)
Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency
Takayoshi Takano et al.
APPLIED PHYSICS EXPRESS (2017)
Ultra-High-Density Arrays of Defect-Free AIN Nanorods: A Space-Filling Approach
Michele Conroy et al.
ACS NANO (2016)
Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation-Free Planar Ultraviolet Photonic Device Applications
Binh H. Le et al.
ADVANCED MATERIALS (2016)
Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy
Kaddour Lekhal et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
Gallium nitride nanostructures: Synthesis, characterization and applications
Thobeka Kente et al.
JOURNAL OF CRYSTAL GROWTH (2016)
In-situ control of large area (11-22)-GaN growth on patterned r-plane sapphire
F. Brunner et al.
JOURNAL OF CRYSTAL GROWTH (2016)
Lattice parameters of AlN bulk, homoepitaxial and heteroepitaxial material
D. Nilsson et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2016)
Metalorganic chemical vapor deposition of GaN nanowires: From catalyst-assisted to catalyst-free growth, and from self-assembled to selective-area growth
Blandine Alloing et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2016)
The Mechanism of Ni-Assisted GaN Nanowire Growth
Carina B. Maliakkal et al.
NANO LETTERS (2016)
Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy
Xin Rong et al.
SUPERLATTICES AND MICROSTRUCTURES (2016)
Analysis of reciprocal space maps of GaN(0001) films grown by molecular beam epitaxy
Viktor S. Kopp et al.
JOURNAL OF APPLIED CRYSTALLOGRAPHY (2014)
Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction
Martin Frentrup et al.
JOURNAL OF APPLIED PHYSICS (2013)
Group III nitride core-shell nano- and microrods for optoelectronic applications
Martin Mandl et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2013)
Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability
K. Lekhal et al.
NANOTECHNOLOGY (2012)
Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate
Wu Meng et al.
CHINESE PHYSICS LETTERS (2011)
Self-assembled growth of catalyst-free GaN wires by metal-organic vapour phase epitaxy
R. Koester et al.
NANOTECHNOLOGY (2010)
Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells
W. Bergbauer et al.
NANOTECHNOLOGY (2010)
Photoreflectance and contactless electroreflectance measurements of semiconductor structures by using bright and dark configurations
R. Kudrawiec et al.
REVIEW OF SCIENTIFIC INSTRUMENTS (2009)
Microstructure and dislocation of epitaxial InN films revealed by high resolution x-ray diffraction
B. Liu et al.
JOURNAL OF APPLIED PHYSICS (2008)
The growth and optical properties of large, high-quality AlN single crystals
M Strassburg et al.
JOURNAL OF APPLIED PHYSICS (2004)
Microstructure of heteroepitaxial GaN revealed by x-ray diffraction
R Chierchia et al.
JOURNAL OF APPLIED PHYSICS (2003)
Micro-Raman investigation of strain in GaN and AlxGa1-xN/GaN heterostructures grown on Si(111)
S Tripathy et al.
JOURNAL OF APPLIED PHYSICS (2002)
Raman scattering studies on single-crystalline bulk AlN under high pressures
M Kuball et al.
APPLIED PHYSICS LETTERS (2001)