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CRYSTENGCOMM (2017)
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IEEE JOURNAL OF QUANTUM ELECTRONICS (2014)
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Hideki Hirayama et al.
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Theodore D. Moustakas
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Microstructural origins of localization in InGaN quantum wells
R. A. Oliver et al.
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Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1-xN structures for deep ultraviolet emissions below 230 nm
JP Zhang et al.
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ME Aumer et al.
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Phase separation suppression in InGaN epitaxial layers due to biaxial strain
A Tabata et al.
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CC Chuo et al.
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YS Lin et al.
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