4.7 Article

Guest Removal and External Pressure Variation Induce Spin Crossover in Halogen-Functionalized 2-D Hofmann Frameworks

期刊

INORGANIC CHEMISTRY
卷 59, 期 19, 页码 14296-14305

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.inorgchem.0c02092

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资金

  1. Australian Research Council (ARC)
  2. ARC [LE170100144]
  3. Spanish Ministerio de Economia y Competitividad (MINECO), FEDER [CTQ2016-78341-P, MDM-2015-0538]
  4. University, State, and Commonwealth Governments
  5. Australian Research Council [LE170100144] Funding Source: Australian Research Council

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The effect of halogen functionalization on the spin crossover (SCO) properties of a family of 2-D Hofmann framework materials, [(FePd)-Pd-II-(CN)(4)(thioX)(2)]center dot 2H(2)O (X = Cl and Br; thioCl = (E)-1-(5-chlorothiophen-2-yl)-N-(4H-1,2,4-triazol-4-yl)methanimine) and thioBr = (E)-1-(5-bromothiophen-2-yl)-N-(4H-1,2,4-triazol-4-yl)methanimine)), is reported. Inclusion of both the chloroand bromo-functionalized ligands into the Hofmann-type frameworks (1(Cl)center dot 2H(2)O and 2(Br)center dot 2H(2)O) results in a blocking of spin-state transitions due to internal chemical pressure effects derived by the collective steric bulk of the halogen atoms and guest molecules. Cooperative one-step SCO transitions are revealed by either guest removal or the application of external physical pressure. Notably, removal of solvent water reveals a robust framework scaffold with only marginal variation between the solvated and desolvated structures (as investigated by powder and single crystal X-ray diffraction). Yet, one-step complete SCO transitions are revealed in 1(Cl) and 2(Br) with a transition temperature shift between the analogues due to various steric, structural, and electronic considerations. SCO can also be induced in the solvated species, 1(Cl)center dot 2H(2)O and 2(Br)center dot 2H(2)O, with the application of physical pressure, revealing a complete one-step SCO transition above 0.62 GPa (as investigated by magnetic susceptibility and single crystal X-ray diffraction measurements).

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