期刊
IET CIRCUITS DEVICES & SYSTEMS
卷 14, 期 7, 页码 1018-1025出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/iet-cds.2020.0015
关键词
aluminium compounds; low noise amplifiers; gallium compounds; high electron mobility transistors; wide band gap semiconductors; semiconductor device models; technology CAD (electronics); III-V semiconductors; microwave field effect transistors; table lookup; hardware description languages; microwave amplifiers; low-noise amplifier; double-gate MOS-HEMT; metal-oxide-semiconductor high-electron-mobility transistor; electrical characteristics; high-frequency noise performances; TCAD device simulations; single-gate MOS-HEMT; sub-threshold slope; short-channel effect immunity; RF performance; noise performance; Cadence EDA tool; look-up table; circuit simulations; wideband feedback cascode; LNA; performance variability; Verilog-A model; size 60; 0 nm; frequency 1; 0 GHz to 20; 0 GHz; AlGaN-GaN-AlGaN
In this study, a 60 nm gate length double-gate AlGaN/GaN/AlGaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) is proposed and different electrical characteristics, such as DC, small-signal, radio-frequency (RF) and high-frequency noise performances of the devices are characterised through TCAD device simulations. The results of double-gate MOS-HEMT are compared with the TCAD simulation results as well as with available experimental data of single-gate AlGaN/GaN MOS-HEMT having a similar gate length available from the literature. It is observed that the double-gate AlGaN/GaN/AlGaN MOS-HEMT shows good sub-threshold slope, improved ON current, short-channel effect immunity, improved RF and noise performance. A look-up table-based Verilog-A model is developed for both devices and the models are incorporated into the Cadence EDA tool to utilise the proposed device in circuit simulations. The Verilog-A model is applied to design a 1-20 GHz wideband feedback cascode low-noise amplifier (LNA). Performance variability of LNA due to single- and double-gate MOS-HEMT is also investigated.
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