期刊
IEEE TRANSACTIONS ON PLASMA SCIENCE
卷 48, 期 7, 页码 2684-2686出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPS.2020.2998007
关键词
Xenon; Plasmas; Semiconductor lasers; Argon; Laser beams; Gas lasers; Power lasers; Atmospheric pressure plasma; diode laser; laser-sustained plasma; thermal plasma
资金
- JSPS KAKENHI [JP26709065, JP18H03812]
Argon-xenon laser-sustained plasma (LSP) was generated using a 1-kW class diode laser. At a total pressure of 1 MPa, the threshold laser power of the xenon-argon LSP was higher than that of the pure xenon LSP, whereas the former was lower than the latter at a total pressure of 0.1 MPa because of homonuclear associative ionization effect. The minimum xenon pressure ratio at which LSP could be generated was 7.67% at a total filled pressure of 3 MPa. The maximum value of fractional absorption was 37.7% at a total filled pressure of 0.5 MPa.
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