期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 67, 期 10, 页码 3925-3937出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.3016609
关键词
Breakdown; current aperture; current blocking layer (CBL); depletion mode (D-mode); drain-induced barrier lowering (DIBL); enhancement mode (E-mode); FinFET; Ga2O3; gallium oxide; halide vapor phase epitaxy (HVPE); interface trap; ion implantation; power transistor; vertical metal-oxide-semiconductor field-effect transistor (MOSFET); wide bandgap
资金
- Council for Science, Technology and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), Next-generation power electronics (New Energy and Industrial Technology Development Organization)
With projected performance advantages over silicon and incumbent wide-bandgap compound semiconductors, gallium oxide (Ga2O3) has garnered worldwide attention as an ultrawide-bandgap semiconductor material suitable for high-voltage, high-temperature, and radiation-hard electronics. Thanks to recent breakthroughs in crystal growth and device processing technologies, the research and development of vertically oriented Ga2O3 power transistors has made rapid strides. In this article, we review the important engineering achievements and performance milestones of the two major types of vertical Ga2O3 transistors-current aperture vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) and vertical fin-channel MOSFETs. Challenges underlying the unique processing approaches to these devices and their implications on device reliability are also discussed.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据