期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 67, 期 10, 页码 3938-3947出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.3003292
关键词
Ga2O3; power semiconductor devices; Schottky diodes; trench-MOS
资金
- NSF [DMREF 1534303]
- Air Force Office of Scientific Research (AFOSR) [FA9550-17-1-0048, FA9550-18-1-0529]
- NSF National Nanotechnology Coordinated Infrastructure (NNCI) Program [ECCS-1542081]
- Materials Research Science and Engineering Centers (MRSEC) Program [DMR-1719875]
- Major Research Instrumentation Program (MRI) [DMR-1338010]
Ultrawide bandgap (UWBG) semiconductors such as beta-Ga2O3 can support a much higher electric field than traditional wide bandgap semiconductors, thus promising an unprecedentedly low conduction loss. However, the maximum electric field in regular Schottky barrier diodes (SBDs) is limited due to the constraint set by the reverse leakage current. On the other hand, a trench SBD structure allows for a much higher electric field to be sustained thanks to the reduced surface field (RESURF) effect. In this article, the guiding principles for trench SBDs are investigated through a case study in Ga2O3. The advantages of trench SBDs are discussed both by quantitative analysis of the ON-state voltage drop (V-ON), as well as by a review of the state-of-the-art Ga2O3 device performance. It is found that for kilovolt-class operation, the trench SBD structure is not only preferred but arguably necessary for high-efficiency Ga2O3 rectifiers. In addition, the effects of fin/trench geometry on the specific ON-resistance and the electric-field profile are investigated. A design flow oriented toward device performance targets is presented, together with an example design of a 1375-V Ga2O3 trench SBD, showing that a V-ON (defined at 100 A/cm(2)) of below 1 V can be obtained. These results highlight the importance in harnessing the high breakdown field of UWBG semiconductors through trench SBDs for efficient power rectifiers, and provide valuable insights into the device design and optimization.
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