期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 67, 期 9, 页码 3650-3654出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.3007595
关键词
Radiative recombination; Light emitting diodes; Charge carrier processes; Cavity resonators; Indium; Power generation; GaN; green light-emitting diode (LED); resonant cavity light-emitting diode (RCLED); trapezoidal quantum wells (TQWs)
资金
- Science and Technology Program of Guangdong Province [2016A010103011, 2017A050501006]
- Natural Science Foundation of Guangdong Province [2018A030310373]
- Fundamental Research Funds for the Central Universities in China [2018MS62]
- Research Team of Photonic Technologies and Intelligent Systems at National Chiao Tung University (NCTU) within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan
- Ministry of Science and Technology in Taiwan [MOST 106-2622-E-009-016-CC3, MOST 106-2221-E-009-112-MY3, MOST 107-2119-M-009-016]
Green resonant-cavity light-emitting diode (RCLED) has great potential in optical communication but suffers low efficiency. In this study, GaN-based flip-chip green RCLED incorporated with nitrogen face-oriented inclination asymmetric trapezoidal quantum wells (NOAT-QWs) is proposed to enhance the light-output power (LOP). Samples with NOAT-QWs and normal symmetric square quantum wells (SS-QWs) were fabricated and characterized. Although their electrical characteristics and emission spectra are similar, the LOP and emission efficiency are significantly improved. At a driving current of 450 mA, the improvement of LOP for RCLED with NOAT-QWs can be as high as 1.44 times in comparison to the sample with SS-QWs. The unprecedented high output power of 115 mW and the narrow full-width-at-half-maximum (FWHM) of 6.4 nm in the emission spectrum give great potential in optical communication. The inherent mechanism was investigated by the finite element analysis, from which the simulation results match well with the experimental measurements. The simulation results reveal that the NOAT-QWs are beneficial in alleviating the quantum confined stark effect and facilitating easier hole carriers' flow across the barriers, leading to more electron-hole wave function overlaps and higher radiative recombination rate.
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