4.5 Article

Monolithic InP Quantum Dot Mode-Locked Lasers Emitting at 730 nm

期刊

IEEE PHOTONICS TECHNOLOGY LETTERS
卷 32, 期 17, 页码 1073-1076

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2020.3012568

关键词

Laser mode locking; Absorption; Optical pulses; Current measurement; Quantum dot lasers; Optical device fabrication; Optical imaging; Mode-locked laser diode; monolithic integration; InP quantum dots

资金

  1. U.K. Engineering Physical Sciences Research Council (EPSRC) [EP/P006973/1, EP/P030556/1]
  2. European Research Council (ERC) through the European Union [640537]
  3. European Research Council (ERC) [640537] Funding Source: European Research Council (ERC)
  4. EPSRC [EP/P006973/1, EP/P030556/1] Funding Source: UKRI

向作者/读者索取更多资源

This letter reports on InP/GaInP quantum dot mode-locked lasers emitting in the 730 nm wavelength region, extending the spectral range of previously reported monolithic mode-locked edge-emitting lasers. Modal gain and absorption measurements were used to identify a relatively broad spectrum which is utilised to support passive mode-locking in a monolithically integrated two-section ridge laser. The conditions for mode-locking were explored by varying the current to the gain section and reverse bias to the absorber section. For a total cavity length of 3 mm, the shortest pulse train observed was 6 ps in duration with a repetition rate of 12.55 GHz.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.5
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据