4.6 Article

A 32 x 32-Pixel CMOS Imager for Quantum Optics With Per-SPAD TDC, 19.48% Fill-Factor in a 44.64-μm Pitch Reaching 1-MHz Observation Rate

期刊

IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 55, 期 10, 页码 2819-2830

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2020.3005756

关键词

CMOS image sensors; entanglement; single-photon avalanche diode (SPAD); super-resolution quantum imaging; time-to-digital converter (TDC)

资金

  1. European Commission through the SUPERTWIN Project [686731]

向作者/读者索取更多资源

This article reports the design and characterization of a 32 x 32 single-photon avalanche diode (SPAD) time-resolved image sensor for quantum imaging applications fabricated in a 150-nm CMOS standard technology. A per-SPAD time-to-digital converter (TDC) records the spatial cross correlation functions of a flux of entangled photons. Each 44.64-mu m pixel with 19.48% fill-factor features a 210.2-ps resolution, 50-ns (8-bit) range TDC with 1.28-LSB differential and 1.92-LSB integral nonlinearity (DNL/INL). The sensor achieves an observation rate of up to 1 MHz through a current-based mechanism that avoids reading empty frames when the photon rates are low. A row-skipping mechanism detects the absence of SPAD activity in a row to increase the duty cycle. These two features require only three transistors in each pixel. The sensor functionality is demonstrated in a quantum imaging experiment that achieves super-resolution.

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