4.6 Article

High-Value Tunable Pseudo-Resistors Design

期刊

IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 55, 期 8, 页码 2094-2105

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2020.2973639

关键词

Active resistor; CMOS; high-value resistor; pseudo-resistor; tunable resistor

资金

  1. EU [688172, TRAINING4CRM H2020, 722779]

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Pseudo-resistor circuits are used to mimic large value resistors and base their success on the reduction of occupied areas with respect to physical devices of equal value. This article presents an optimized architecture of pseudo-resistor, made in standard CMOS 0.35 mu m technology to bias a low-noise transimpedance amplifier for high-sensitivity applications in the frequency range 100 kHz-10 MHz. The architecture was selected after a critical review of the different topologies to implement high-value resistances with MOSFET transistors, considering their performance in terms of linearity of response, symmetric dynamic range, frequency behavior, and simplicity of realization. The resulting circuit consumes an area of 0.017 mm(2) and features a tunable resistance from 20 M Omega to 20 G Omega, dynamic offset reduction due to a more than linear I-V curve, and a high-frequency noise well below the one of a physical resistor of equal value. This latter aspect highlights the larger perspective of pseudo-resistors as building blocks in very low-noise applications in addition to the advantage in occupied areas they provide.

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