期刊
IEEE ELECTRON DEVICE LETTERS
卷 41, 期 10, 页码 1596-1599出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2020.3015842
关键词
Resistive switching; random telegraph noise; charge trapping; resistive coupling model
资金
- CNPq/BRICS-STI [442272/2017-0]
- Chinese MOST [BRICS2018-211-2DNEURO]
Resistive switching (RS) devices are being studied exhaustively for multiple applications such as information storage and bio-inspired computing, but some reliability problems are still hindering their massive use. Among them, random telegraph noise (RTN) is one of the phenomena that still needs to be understood. In this work, we develop a general model to describe RTN in RS devices by demonstrating the existence of coupling effects between multiple traps, and their effect in the current amplitude deviation. We accurately describe anomalous RTN signals observed in high resistive state (HRS) and low-resistance state (LRS) of RS devices based on TiO2 and hexagonal boron nitride (h-BN).
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