期刊
COMPUTATIONAL MATERIALS SCIENCE
卷 183, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.commatsci.2020.109886
关键词
Defect etching; Etch pit density; Dislocation density; Crystal defects; Multicrystalline silicon; mc-Si
资金
- German Federal Ministry of Economic Affairs and Energy [0324041B, 0324001]
This publication contains a description and is published in combination with the source code for a tool capable of determining the etch pit density (EPD) on multicrystalline silicon image data. The algorithm is capable of classifying grain boundaries and polishing scratches and removes these structures from the analysis result. Included with the analysis code are methods for plotting EPD maps as well as relative EPD frequency. This is combined with a brief description of the experimental steps of wafer preparation and defect etching as well as a discussion of the analysis limitations.
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