Effects of Al Precursors on Deposition Selectivity of Atomic Layer Deposition of Al2O3 Using Ethanethiol Inhibitor

Area-selective atomic layer deposition (AS-ALD) is a promising bottom-up patterning approach for fabricating conformal thin films. One of the current challenges with respect to AS-ALD is the deficiency of the surface inhibitor used for fabricating nanoscale three-dimensional structures. In this study, a vapor-deliverable small inhibitor called ethanethiol (ET) that thermally adsorbs on surfaces was used for the AS-ALD of Al2O3. The inhibitor selectively adsorbed on Co and Cu substrates but not on the SiO2 substrate, allowing for the selective deactivation of Co and Cu substrates in Al2O3 ALD. The use of dimethylaluminum isopropoxide (DMAI) as the Al precursor resulted in better inhibition than the use of trimethylaluminum (TMA). Various experimental and theoretical methods, including water contact angle measurements, spectroscopic ellipsometry, X-ray photoelectron spectroscopy, density functional theory calculations, and Monte Carlo simulations, were used to elucidate the process of AS-ALD using ET. Dimerization of the DMAI precursor is considered to be a governing factor for its high deposition selectivity, while the probability of this phenomenon is very low for the TMA precursor. The current study provides insight into the selectivity of AS-ALD from the perspective of the chemical reaction and an opportunity to improve selectivity via precursor selection.