4.7 Article

Bipolar resistive switching characteristics of PbZrO3/LaNiO3 heterostructure thin films prepared by a sol-gel process

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Editorial Material Materials Science, Ceramics

Implementing ceramic materials into neuromorphic memory devices through oxide-based memristors

Bethany X. Rutherford

AMERICAN CERAMIC SOCIETY BULLETIN (2021)

Article Materials Science, Multidisciplinary

Enhancements of the electrical properties in Pb1.25(Zr0.52,Ti0.48)O3/Pb1.1(Zr0.52,Ti0.48)O3 ferroelectric multilayered thin films

Xing Wang et al.

MATERIALS CHEMISTRY AND PHYSICS (2020)

Article Materials Science, Multidisciplinary

Nonvolatile switchable resistive behaviour via organic-inorganic hybrid interactions

Venkata K. Perla et al.

JOURNAL OF MATERIALS SCIENCE (2019)

Article Materials Science, Coatings & Films

On the origin of enhanced resistive switching behaviors of Ti-doped HfO2 film with nitrogen annealing atmosphere

Hao Zhou et al.

SURFACE & COATINGS TECHNOLOGY (2019)

Article Materials Science, Ceramics

Universal dielectric relaxation induced giant dielectric permittivity in Mn-doped PbZrO3 ceramics

Hongbo Liu

CERAMICS INTERNATIONAL (2019)

Article Nanoscience & Nanotechnology

Remarkably Enhanced Negative Electrocaloric Effect in PbZrO3 Thin Film by Interface Engineering

Ming Wu et al.

ACS APPLIED MATERIALS & INTERFACES (2019)

Article Physics, Applied

Flexible high energy density capacitors using La-doped PbZrO3 anti-ferroelectric thin films

Hye Ji Lee et al.

APPLIED PHYSICS LETTERS (2018)

Article Chemistry, Physical

Forming-free sol-gel ZrOx resistive switching memory

Chih-Chieh Hsu et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2018)

Review Materials Science, Multidisciplinary

Oxide-based RRAM materials for neuromorphic computing

XiaoLiang Hong et al.

JOURNAL OF MATERIALS SCIENCE (2018)

Article Physics, Applied

Resistance switching and memory effects in solution-processed BiFeO3/LaNiO3 junctions

N. C. Pandya et al.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2016)

Article Nanoscience & Nanotechnology

Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O3/Nb:SrTiO3 Heterostructures

Yu Bai et al.

ACS APPLIED MATERIALS & INTERFACES (2016)

Article Chemistry, Physical

Resistance switching properties of Cu2S film by electrochemical deposition

Yongming Yan et al.

APPLIED SURFACE SCIENCE (2016)

Article Physics, Multidisciplinary

Oxygen-deficient GdK2Nb5O15 ferroelectric epitaxial thin film

B. Allouche et al.

Article Multidisciplinary Sciences

Effect of Oxygen-deficiencies on Resistance Switching in Amorphous YFe0.5Cr0.5O3-d films

Xianjie Wang et al.

SCIENTIFIC REPORTS (2016)

Article Nanoscience & Nanotechnology

Impact of program/erase operation on the performances of oxide-based resistive switching memory

Guoming Wang et al.

NANOSCALE RESEARCH LETTERS (2015)

Review Physics, Applied

Resistive switching phenomena: A review of statistical physics approaches

Jae Sung Lee et al.

APPLIED PHYSICS REVIEWS (2015)

Review Computer Science, Information Systems

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Ee Wah Lim et al.

ELECTRONICS (2015)

Review Materials Science, Multidisciplinary

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

F. Pan et al.

MATERIALS SCIENCE & ENGINEERING R-REPORTS (2014)

Article Materials Science, Multidisciplinary

Resistive switching in epitaxial BaTiO3 films grown on Nb-doped SrTiO3 by PLD

Ruikun Pan et al.

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS (2014)

Review Nanoscience & Nanotechnology

Memristive devices for computing

J. Joshua Yang et al.

NATURE NANOTECHNOLOGY (2013)

Article Materials Science, Multidisciplinary

Effect of resistive switching and electrically driven insulator-conductor transition in PbZrO3 single crystals

Irena Jankowska-Sumara et al.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2013)

Article Physics, Applied

Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt

Yao Shuai et al.

JOURNAL OF APPLIED PHYSICS (2011)

Article Physics, Applied

Effect of Zr addition on ZnSnO thin-film transistors using a solution process

You Seung Rim et al.

APPLIED PHYSICS LETTERS (2010)

Article Materials Science, Multidisciplinary

Unipolar resistive switching behavior of BiFeO3 thin films prepared by chemical solution deposition

Shih-Wei Chen et al.

THIN SOLID FILMS (2010)

Review Materials Science, Multidisciplinary

Resistive switching in transition metal oxides

Akihito Sawa

MATERIALS TODAY (2008)

Article Nanoscience & Nanotechnology

Memristive switching mechanism for metal/oxide/metal nanodevices

J. Joshua Yang et al.

NATURE NANOTECHNOLOGY (2008)

Editorial Material Multidisciplinary Sciences

Materials science - Who wins the nonvolatile memory race?

G. I. Meijer

SCIENCE (2008)

Article Physics, Applied

Resistance switching properties of sol-gel derived SrZrO3 based memory thin films

Chih-Yi Liu et al.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2007)

Article Engineering, Electrical & Electronic

Future directions and challenges for ETox flash memory scaling

G Atwood

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY (2004)