期刊
COMPUTATIONAL MATERIALS SCIENCE
卷 123, 期 -, 页码 40-43出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.commatsci.2016.06.001
关键词
Thermal conductivity; Surface roughness; Non-equilibrium molecular dynamics; Ge thin films
资金
- Fundamental Research Funds for the Central Universities of China [2572016BB04]
We use non-equilibrium molecular dynamics (NEMD) simulations to compute thermal conductivity of Ge thin films with rough surface. The analysis shows that the shape, height, and length of the surface roughness have an appreciable influence on the in-plane and cross-plane thermal conductivity of Ge thin films. The thermal conductivity significantly decreases with increasing the period height of roughness or with decreasing the period length of roughness. Phonon-boundary scattering mechanism could be used to explain our results. (C) 2016 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据