4.7 Article

Solution-processed ZnO:graphene quantum dot/Poly-TPD heterojunction for high-performance UV photodetectors

期刊

APPLIED SURFACE SCIENCE
卷 539, 期 -, 页码 -

出版社

ELSEVIER
DOI: 10.1016/j.apsusc.2020.148222

关键词

Graphene quantum dots; Zinc oxide; Poly-TPD; UV; Photodetector

资金

  1. Korea Institute of Energy Technology Evaluation and Planning (KETEP)
  2. Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea [20194030202290]
  3. Korea Electric Power Corporation [R18XA02]

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By incorporating graphene quantum dots, the ZnO film's physical and chemical characteristics are improved, leading to enhanced transport of photogenerated carriers and longer charge lifetimes. Under appropriate GQD concentration, the ZnO:GQD/Poly-TPD photodiode shows balanced energy structure, increased mobility, and reduced charge recombination compared to other devices, demonstrating excellent performance in UV detection.
Recently, ZnO-based photodetectors have gained immense attention for ultraviolet detection applications owing to their abundance and cost-effective synthesis. However, low responsivity, slow speed, and complicated fabrication limit the applications of these detectors. Herein, we report a high-performance UV photodiode based on n-type graphene quantum dot-decorated ZnO (ZnO:GQD) and p-type poly(N,N'-bis-4-butylphenyl-N,N'-bisphenyl)benzidine (Poly-TPD) heterojunction. First, we demonstrate the incorporation of GQD in ZnO not only reduces the ZnO surface roughness and ZnO nanoparticle size but also promotes the transport of photogenerated carriers and increases the charge lifetime of ZnO. The effect of GQD content on the physical and chemical characteristics of the ZnO film is investigated using Raman spectroscopy, XRD, SEM, AFM, UV-vis spectroscopy, and PL. Second, under the appropriate GQD concentration condition, the performances of various ZnO:GQDbased devices are compared to understand the charge transport mechanism. As a result, the photodiode based on ZnO:GQD/Poly-TPD shows the most balanced energy structure, enhanced mobility, and alleviation in charge recombination relative to the other devices. The ZnO:GQD/Poly-TPD photodetector exhibits excellent performance under 365-nm UV illumination: a rise/decay time of 0.37/0.78 s and a specific detectivity of 2.1 x 10(11) Jones (at -3 V bias) with outstanding stability at least for 10 weeks without significant photocurrent degeneration.

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