相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Influence of System Performance on Layer Thickness Determination Using Terahertz Time-Domain Spectroscopy
Stefan Weber et al.
JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES (2020)
Fiber Coupled Transceiver with 6.5 THz Bandwidth for Terahertz Time-Domain Spectroscopy in Reflection Geometry
Robert B. Kohlhaas et al.
SENSORS (2020)
ErAs:In(Al)GaAs photoconductor-based time domain system with 4.5 THz single shot bandwidth and emitted terahertz power of 164 μW
Uttam Nandi et al.
OPTICS LETTERS (2020)
Photoconductive terahertz detectors with 105 dB peak dynamic range made of rhodium doped InGaAs
R. B. Kohlhaas et al.
APPLIED PHYSICS LETTERS (2019)
Industrial Applications of Terahertz Sensing: State of Play
Mira Naftaly et al.
SENSORS (2019)
Rhodium doped InGaAs: A superior ultrafast photoconductor
R. B. Kohlhaas et al.
APPLIED PHYSICS LETTERS (2018)
1550-nm Driven ErAs:In(Al)GaAs Photoconductor-Based Terahertz Time Domain System with 6.5 THz Bandwidth
U. Nandi et al.
JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES (2018)
High power generation of THz from 1550-nm photoconductive emitters
A. Mingardi et al.
OPTICS EXPRESS (2018)
Advanced GPU-Based Terahertz Approach for In-Line Multilayer Thickness Measurements
Soufiene Krimi et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2017)
Iron doped InGaAs: Competitive THz emitters and detectors fabricated from the same photoconductor
B. Globisch et al.
JOURNAL OF APPLIED PHYSICS (2017)
A High-Power Broadband Terahertz Source Enabled by Three-Dimensional Light Confinement in a Plasmonic Nanocavity
Nezih Tolga Yardimci et al.
SCIENTIFIC REPORTS (2017)
Absolute terahertz power measurement of a time-domain spectroscopy system
Bjoern Globisch et al.
OPTICS LETTERS (2015)
Carrier dynamics in Beryllium doped low-temperature-grown InGaAs/InAlAs
B. Globisch et al.
APPLIED PHYSICS LETTERS (2014)
7.5% Optical-to-Terahertz Conversion Efficiency Offered by Photoconductive Emitters With Three-Dimensional Plasmonic Contact Electrodes
Shang-Hua Yang et al.
IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY (2014)
64 μW pulsed terahertz emission from growth optimized InGaAs/InAlAs heterostructures with separated photoconductive and trapping regions
Roman J. B. Dietz et al.
APPLIED PHYSICS LETTERS (2013)
Terahertz-frequency photoconductive detectors fabricated from metal-organic chemical vapor deposition-grown Fe-doped InGaAs
O. Hatem et al.
APPLIED PHYSICS LETTERS (2011)
Terahertz spectroscopy and imaging - Modern techniques and applications
Peter Uhd Jepsen et al.
LASER & PHOTONICS REVIEWS (2011)
THz generation at 1.55 μm excitation: six-fold increase in THz conversion efficiency by separated photoconductive and trapping regions
Roman J. B. Dietz et al.
OPTICS EXPRESS (2011)
Terahertz emission from metal-organic chemical vapor deposition grown Fe:InGaAs using 830 nm to 1.55 μm excitation
C. D. Wood et al.
APPLIED PHYSICS LETTERS (2010)
Next generation 1.5 μm terahertz antennas: mesa-structuring of InGaAs/InAlAs photoconductive layers
H. Roehle et al.
OPTICS EXPRESS (2010)
All-fiber terahertz time-domain spectrometer operating at 1.5 μm telecom wavelengths
B. Sartorius et al.
OPTICS EXPRESS (2008)
Fe-implanted InGaAs photoconductive terahertz detectors triggered by 1.56 μm femtosecond optical pulses -: art. no. 163504
M Suzuki et al.
APPLIED PHYSICS LETTERS (2005)
Fe-implanted InGaAs terahertz emitters for 1.56 μm wavelength excitation -: art. no. 051104
M Suzuki et al.
APPLIED PHYSICS LETTERS (2005)
分享论文
