期刊
APPLIED PHYSICS LETTERS
卷 117, 期 14, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/5.0015547
关键词
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资金
- U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-AC02-06CH11357]
- U.S. National Science Foundation [NSF-DMR-1508220]
- Spanish Ministerio de Ciencia e Innovacion, through the Severo Ochoa Programme for Centres of Excellence in R&D (AEI/FEDER, EU) [SEV-2015-0496, MAT2017-85232-R, MAT2015-73839-JIN]
- Generalitat de Catalunya [2017 SGR 1377]
- Ramon y Cajal [RYC-2017-22531]
Herein, we report a cryogenic-temperature study on the evolution of the ferroelectric properties of epitaxial Hf0.5Zr0.5O2 thin films on silicon. Wake-up, endurance, and fatigue of these films are found to be intricately correlated, strongly hysteretic, and dependent on available thermal energy. Field-dependent measurements reveal a decrease in polarization with temperature, which has been determined not to be an intrinsic change of the material property, rather a demonstration of the increase in the coercive bias of the material. Our findings suggest that a deficiency in thermal energy suppresses the mobility of defects presumed to be oxygen vacancies during wake-up and trapped injected charge during fatigue, which is responsible for polarization evolution during cycling. This permits accelerated wake-up and fatigue effects at high temperatures where thermal energy is abundant but delays these effects at cryogenic temperatures.
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