期刊
APPLIED PHYSICS LETTERS
卷 117, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/5.0010906
关键词
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资金
- JST-CREST [JPMJCR 1675]
- JSPS-KAKENHI [20H00237]
- Quantum Leap Flagship Program (Q-LEAP) of the Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan [JPMXS 0118069228]
- Grants-in-Aid for Scientific Research [20H00237] Funding Source: KAKEN
Physically defined silicon triple quantum dots (TQDs) are fabricated on a silicon-on-insulator substrate by dry-etching. The fabrication method enables us to realize a simple structure that does not require gates to create quantum dot confinement potentials and is highly advantageous for integration. We observe the few-electron regime and resonant tunneling points in the TQDs by applying voltages to two plunger gates at a temperature of 4.2K. Moreover, we reproduce the measured charge stability diagram by simulation with an equivalent-circuit model composed of capacitors and resistors. The equivalent-circuit simulation makes it clear that we realize three QDs in series within the nanowire, as planned. This circuit model also elucidates the mechanism of resonant tunneling and identifies a quadruple point of TQDs.
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