In-plane anisotropy in the direction of the dislocation bending in α-Ga2O3 grown by epitaxial lateral overgrowth

Threading dislocations in alpha-Ga2O3 grown by epitaxial lateral overgrowth (ELO) were observed by using atomic force microscopy after a surface etching using 10 wt% KOH aqueous solution heated at 60 degrees C. The ELO alpha-Ga2O3 was characterized by an in-plane anisotropy in the direction of the dislocation bending as followings: the dislocations in ELO alpha-Ga2O3 bend in the < 10 (1) over bar0 > direction of alpha-Ga2O3, while the dislocation-free areas expand in the < 11 (2) over bar0 > direction from the positions of windows. The anisotropy is an important factor to control the dislocations in alpha-Ga2O3 and to optimize the ELO of alpha-Ga2O3. (c) 2020 The Japan Society of Applied Physics