Digits holography for spatially resolved analysis of the semiconductor optical response

We present spatially resolved measurements of the below-band-gap carrier-induced absorption and concurrent phase change in a semiconductor with the help of transmission digital holography. The application is demonstrated for a bulk GaAs sample, while the holograms are recorded with a conventional CMOS sensor. We show that the phase information enables spatially resolved monitoring of excess carrier distributions. Based on that, we discuss a phase-based approach for separation of carrier and heat related effects in the semiconductor optical response. (C) 2020 Optical Society of America

Automated summary

In this study, spatially resolved measurements of below-band-gap carrier-induced absorption and phase change in a semiconductor were achieved using transmission digital holography. The phase information enabled monitoring of excess carrier distributions, and a phase-based approach for separating carrier and heat related effects in the semiconductor optical response was discussed.