4.8 Article

Pressure-Dependent Behavior of Defect-Modulated Band Structure in Boron Arsenide

期刊

ADVANCED MATERIALS
卷 32, 期 45, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202001942

关键词

band structure; boron arsenide; high pressure; impurities; photoluminescence

资金

  1. National Science Foundation (NASCENT) [EEC-1160494]
  2. Institute of Eminence (IoE) MHRD grant of Indian Institute of Science
  3. Office of Naval Research (ONR) MURI grant [N00014-16-1-2436]
  4. National Science Foundation (CAREER) [CBET-1351881, CBET-1707080]
  5. National Science Foundation (Center for Dynamics and Control of Materials) [DMR-1720595]

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The recent observation of unusually high thermal conductivity exceeding 1000 W m(-1)K(-1)in single-crystal boron arsenide (BAs) has led to interest in the potential application of this semiconductor for thermal management. Although both the electron/hole high mobilities have been calculated for BAs, there is a lack of experimental investigation of its electronic properties. Here, a photoluminescence (PL) measurement of single-crystal BAs at different temperatures and pressures is reported. The measurements reveal an indirect bandgap and two donor-acceptor pair (DAP) recombination transitions. Based on first-principles calculations and time-of-flight secondary-ion mass spectrometry results, the two DAP transitions are confirmed to originate from Si and C impurities occupying shallow energy levels in the bandgap. High-pressure PL spectra show that the donor level with respect to the conduction band minimum shrinks with increasing pressure, which affects the release of free carriers from defect states. These findings suggest the possibility of strain engineering of the transport properties of BAs for application in electronic devices.

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