期刊
ADVANCED MATERIALS
卷 32, 期 43, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202003567
关键词
2D materials; electroluminescence; light-emitting transistors; van der Waals heterostructures; WSe2
类别
资金
- Samsung Research Funding Center of Samsung Electronics [SRFC-MA1502-12]
- National Research Foundation (NRF) - Ministry of Science, ICT & Future Planning by the Korean government (SRC program: vdWMRC center) [2018M3D1A1058793, 2019R1F1A1058420, 2020R1A2C2009389, 2017R1A5A1014862]
- Elemental Strategy Initiative by the MEXT, Japan [JPMXP0112101001]
- JSPS KAKENHI [JP20H00354]
- KU-KIST School Project
- NSF MRSEC program through the Center for Precision Assembly of Superstratic and Superatomic Solids [DMR-1420634]
- CREST, JST [JPMJCR15F3]
- National Research Foundation of Korea [2020R1A2C2009389, 2019R1F1A1058420] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
2D semiconductors have shown great potential for application to electrically tunable optoelectronics. Despite the strong excitonic photoluminescence (PL) of monolayer transition metal dichalcogenides (TMDs), their efficient electroluminescence (EL) has not been achieved due to the low efficiency of charge injection and electron-hole recombination. Here, multioperation-mode light-emitting field-effect transistors (LEFETs) consisting of a monolayer WSe(2)channel and graphene contacts coupled with two top gates for selective and balanced injection of charge carriers are demonstrated. Visibly observable EL is achieved with the high external quantum efficiency of approximate to 6% at room temperature due to efficient recombination of injected electrons and holes in a confined 2D channel. Further, electrical tunability of both the channel and contacts enables multioperation modes, such as antiambipolar, depletion,and unipolar regions, which can be utilized for polarity-tunable field-effect transistors and photodetectors. The work exhibits great potential for use in 2D semiconductor LEFETs for novel optoelectronics capable of high efficiency, multifunctions, and heterointegration.
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