期刊
ADVANCED FUNCTIONAL MATERIALS
卷 30, 期 46, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202004450
关键词
AlN; GaN heterostructure; quantum Hall effect; Shubnikov-de Haas oscillations; 2D electron gas
类别
资金
- National Key R&D Program of China [2017YFE0100300]
- Beijing Outstanding Young Scientist Program [BJJWZYJH0120191000103]
- Science Challenge Project [TZ2016003]
- National Natural Science Foundation of China [61734001, 61521004, 61674010, 11674006, 11974339]
Ultrathin barrier AlN/GaN heterostructure with record low sheet resistance of 82 omega sq(-1)is achieved by molecular beam epitaxy, where Shubnikov-de Haas oscillations (SdHOs) and quantum Hall effect (QHE) of two-dimensional electron gas (2DEG) are observed. The fast Fourier transform analysis of the SdHOs demonstrates a three-subband occupation in the triangle quantum well for the first time, with the electron density ofn(1)=2.2x10(13) cm(-2),n(2)= 2.3x10(12)cm(-2), andn(3)=8.8x10(11)cm(-2), respectively, and the corresponding energy of 265, 28, and 11 meV below Fermi level. The three-subband QHE with a superposed feature is also demonstrated for the first time in AlN/GaN heterostructure, with large filling factors at high electron densities. By analyzing the first subband as the dominant part of the superposed QHE, the transport physics of a special magneto-intersubband scattering is revealed. These results contribute to a better understanding of the quantum physics for 2DEG, leading to a versatile functionality for AlN/GaN devices.
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