4.8 Article

InP/ZnS/ZnS Core/Shell Blue Quantum Dots for Efficient Light-Emitting Diodes

期刊

ADVANCED FUNCTIONAL MATERIALS
卷 30, 期 49, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202005303

关键词

blue; InP; QLED; quantum dots

资金

  1. National Key Research and Development Program of China [2016YFB0401702, 2017YFE0120400]
  2. National Natural Science Foundation of China [51502020, 61674074, 61405089, 61875082]
  3. Guangdong Province's Key RAMP
  4. D Program: Environmentally Friendly Quantum Dots Luminescent Materials [2019B010924001]
  5. Guangdong Province's Key RAMP
  6. D Program: Micro-LED Display and Ultra-high Brightness Micro-display technology [2019B010925001]
  7. Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting [2017KSYS007]
  8. Natural Science Foundation of Guangdong Province [2017B030306010]
  9. Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting [ZDSYS201707281632549]
  10. Shenzhen Peacock Team Project [KQTD2016030111203005]
  11. Shenzhen Innovation Project [JCYJ20160301113356947, JSGG20170823160757004]
  12. Doctoral Fund of Ministry of Education of China [2017M610484, 2017M612497]
  13. High Level University Fund of Guangdong Province [G02236004]
  14. National Basic Research Program of China (973 Program) [2014CB643801]

向作者/读者索取更多资源

As the concerns about using cadmium-based quantum dots (QDs) in display are growing worldwide, InP QDs have drawn much attention in quantum dot light-emitting diodes (QLEDs). However, pure blue InP based QLED has been rarely reported. In this work, first of all, pure blue InP/ZnS QDs with emission wavelength of 468 nm and quantum yield of 45% are synthesized. Furthermore, zinc oleate and S-TOP are used as precursors to epitaxially grow the second ZnS shell. The residual zinc stearate reacted with S-TOP to form ZnS shell, which increased the thickness and stability of QDs. Moreover, as the residual precursor of zinc stearate is removed, the current density increased from 13 mA cm(-2)to 121 mA cm(-2)at 8 V for the hole only device. External quantum efficiency increased from 0.6% of InP/ZnS QLED to 1.7% of InP/ZnS/ZnS QLED.

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