4.8 Article

Ionic Current Rectification of Porous Anodic Aluminum Oxide (AAO) with a Barrier Oxide Layer

期刊

ACS NANO
卷 14, 期 10, 页码 13727-13738

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.0c05954

关键词

ionic current rectification (ICR); anodization; porous anodic aluminum oxide (AAO); barrier oxide layer; electroporation

资金

  1. National Research Council of Science & Technology of Korea through the KRISS project Industrial Metrology
  2. Technology Innovation Program, Development and supply of certified reference materials for the thickness analysis of high-k alloy oxide thin films - Ministry of Trade, Industry & Energy (MOTIE, Korea) [20008470]
  3. Korea Evaluation Institute of Industrial Technology (KEIT) [20008470] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  4. National Research Council of Science & Technology (NST), Republic of Korea [GP2020-0011] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

Synthetic nanofluidic diodes with highly nonlinear current-voltage characteristics are currently of particular interest because of their potential applications in biosensing, separation, energy harvesting, and nanofluidic electronics. We report the ionic current rectification (ICR) characteristics of a porous anodic aluminum oxide membrane, whose one end of the nanochannels is closed by a barrier oxide layer. The membrane exhibits intriguing pH-dependent ion transport characteristics, which cannot be explained by the conventional surface charge governed ionic transport mechanism. We reveal experimentally and theoretically that the space charge density gradient present across the 40-nm-thick barrier oxide is mainly responsible for the evolution of ICR. Based on our findings, we demonstrate the formation of a single 5-8-nm-sized pore in each hexagonal cell of the barrier oxide. The present work would provide valuable information for the design and fabrication of future ultrathin nanofluidic devices without being limited by the engineering of the nanochannel geometry or surface charge.

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