期刊
CHEMOSENSORS
卷 8, 期 3, 页码 -出版社
MDPI
DOI: 10.3390/chemosensors8030067
关键词
SnO2/ZnO; heterostructures; NO2 gas; MOS; sensing mechanism
资金
- National Research Foundation of Korea [NRF-2018R1C1B5044487, NRF-2019K1A3A1A16106193]
- National Research Foundation of Korea [2019K1A3A1A16106193] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
A highly sensitive and selective NO(2)gas sensor dependent on SnO2/ZnO heterostructures was fabricated using a sputtering process. The SnO2/ZnO heterostructure thin film samples were characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), Energy-dispersive X-ray spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS). Sensors fabricated with heterostructures attained higher gas response (S = 66.9) and quicker response-recovery (20 s, 45 s) characteristics at 100 degrees C operating temperature towards 100 ppm NO2 gas efficiently in comparison to sensors based on their mono-counterparts. The selectivity and stability of SnO2/ZnO heterostructures were studied. The more desirable sensing mechanism of SnO2/ZnO heterostructures towards NO2 was described in detail.
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