期刊
NPJ QUANTUM MATERIALS
卷 5, 期 1, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/s41535-020-00256-8
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资金
- U.S. Department of Energy (DOE) BES Quantum Fluctuations in Narrow-Band Systems project
- DOE BES Science of 100 Tesla project
- LANL Director's Postdoctoral LDRD program
- National Science Foundation [NSF/DMR-1644779]
- State of Florida
- FAPESP (SP-Brazil) [2018/11364-7, 2017/10581-1, 2012/04870-7]
- CNPq [141026/2017-0]
- CAPES
- FINEP-Brazil
- UK Engineering and Physical Sciences Research Council [EP/N027671/1, EP/N034694/1]
- DOE [de-sc0016239]
- NSF EAGER [1004957]
- Simons Investigator Grants
- ARO MURI [W911NF- 12-1-0461]
- Packard Foundation
- Schmidt Fund for Innovative Research
- Max Planck society
- National Natural Science Foundation of China [11974395]
- Chinese Academy of Sciences (CAS) [XDB33000000]
- CAS Pioneer Hundred Talents Program
- Fundacao de Amparo a Pesquisa do Estado de Sao Paulo (FAPESP) [12/04870-7] Funding Source: FAPESP
Here we investigate antiferromagnetic Eu5In2Sb6, a nonsymmorphic Zintl phase. Our electrical transport data show that Eu5In2Sb6 is remarkably insulating and exhibits an exceptionally large negative magnetoresistance, which is consistent with the presence of magnetic polarons. From ab initio calculations, the paramagnetic state of Eu5In2Sb6 is a topologically nontrivial semimetal within the generalized gradient approximation (GGA), whereas an insulating state with trivial topological indices is obtained using a modified Becke-Johnson potential. Notably, GGA+U calculations suggest that the antiferromagnetic phase of Eu5In2Sb6 may host an axion insulating state. Our results provide important feedback for theories of topological classification and highlight the potential of realizing clean magnetic narrow-gap semiconductors in Zintl materials.
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