期刊
SOLAR RRL
卷 4, 期 9, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/solr.202000210
关键词
direct wafer bonding; III-V on Si; metalorganic vapor phase epitaxy; multijunction solar cells
资金
- Heinrich Boll foundation
- German Federal Ministry for Economic Affairs and Energy [FKz. 0324247- PoTaSi]
The terrestrial photovoltaic market is dominated by single-junction silicon solar cell technology. However, there is a fundamental efficiency limit at 29.4%. This is overcome by multijunction devices. Recently, a GaInP/GaAs//Si wafer-bonded triple-junction two-terminal device is presented with a 33.3% (AM1.5g) efficiency. Herein, it is analyzed how this device is improved to reach a conversion efficiency of 34.1%. By improving the current matching, an efficiency of 35% (two terminals, AM1.5g) is expected.
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