Halide Segregation versus Interfacial Recombination in Bromide-Rich Wide-Gap Perovskite Solar Cells

Perovskites offer exciting opportunities to realize efficient multijunction photovoltaic devices. This requires high-V-OC and often Br-rich perovskites, which currently suffer from halide segregation. Here, we study triple-cation perovskite cells over a wide bandgap range (similar to 1.5-1.9 eV). While all wide-gap cells (>= 1.69 eV) experience rapid phase segregation under illumination, the electroluminescence spectra are less affected by this process. The measurements reveal a low radiative efficiency of the mixed halide phase which explains the V-OC losses with increasing Br content. Photoluminescence measurements on nonsegregated partial cell stacks demonstrate that both transport layers (PTAA and C-60) induce significant nonradiative interfacial recombination, especially in Br-rich (>30%) samples. Therefore, the presence of the segregated iodide-rich domains is not directly responsible for the V-OC losses. Moreover, LiF can only improve the V-OC of cells that are primarily limited by the n-interface (<= 1.75 eV), resulting in 2090 efficient 1.7 eV bandgap cells. However, a simultaneous optimization of the p-interface is necessary to further advance larger bandgap (>= 1.75 eV) pin-type cells.