期刊
SCIENCE CHINA-MATERIALS
卷 63, 期 8, 页码 1548-1559出版社
SCIENCE PRESS
DOI: 10.1007/s40843-020-1355-2
关键词
metal-semiconductor heterostructures; contact engineering; field-effect transistor; photodetector
资金
- National Key R&D Program of China [2018YFA0306900, 2018YFA0305800]
- National Natural Science Foundation of China [51872012]
Two-dimensional (2D) heterostructures based on layered transition metal dichalcogenides (TMDs) have attracted increasing attention for the applications of the next-generation high-performance integrated electronics and optoelectronics. Although various TMD heterostructures have been successfully fabricated, epitaxial growth of such atomically thin metal-semiconductor heterostructures with a clean and sharp interface is still challenging. In addition, photodetectors based on such heterostructures have seldom been studied. Here, we report the synthesis of high-quality vertical NbS2/MoS(2)metallic-semiconductor heterostructures. By using NbS(2)as the contact electrodes, the field-effect mobility and current on-off ratio of MoS(2)can be improved at least 6-fold and two orders of magnitude compared with the conventional Ti/Au contact, respectively. By using NbS(2)as contact, the photodetector performance of MoS(2)is much improved with higher responsivity and less response time. Such facile synthesis of atomically thin metal-semiconductor heterostructures by a simple chemical vapor deposition strategy and its effectiveness as ultrathin 2D metal contact open the door for the future application of electronics and optoelectronics.
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