The Electronic Properties of Extended Defects in SrTiO3-A Case Study of a Real Bicrystal Boundary

This study investigates the impact of extended defects such as dislocations on the electronic properties of SrTiO(3)by using a 36.8 degrees bicrystal as a model system. In order to evaluate the hypothesis that dislocations can serve as preferential reduction sites, which has been proposed in the literature on the basis of ab initio simulations, as well as on experiments employing local-conductivity atomic force microscopy (LC-AFM), detailed investigations of the bicrystal boundary are conducted. In addition to LC-AFM, fluorescence lifetime imaging microscopy (FLIM) is applied herein as a complementary method for mapping the local electronic properties on the microscale. Both techniques confirm that the electronic structure and electronic transport in dislocation-rich regions significantly differ from those of undistorted SrTiO3. Upon thermal reduction, a further confinement of conductivity to the bicrystal boundary region was found, indicating that extended defects can indeed be regarded as the origin of filament formation. This leads to the evolution of inhomogeneous properties of defective SrTiO(3)on the nano- and microscales.