期刊
ADVANCED SCIENCE
卷 7, 期 19, 页码 -出版社
WILEY
DOI: 10.1002/advs.202000991
关键词
HfS2; hybrid structures; negative differential resistance (NDR); pentacene
资金
- Basic Science Research Program through National Research Foundation of Korea (NRF) - Korea government (MSIP) [2020R1A4A2002806, 2019M3F3A1A01074451, 2018R1A2A2A05020475, 2016M3A7B4910426]
- Nano-Material Technology Development Program through National Research Foundation of Korea (NRF) - Korea government (MSIP) [2020R1A4A2002806, 2019M3F3A1A01074451, 2018R1A2A2A05020475, 2016M3A7B4910426]
- Future Semiconductor Device Technology Development Program - Ministry of Trade, Industry and Energy (MOTIE) [10067739]
- Korea Semiconductor Research Consortium (KSRC)
- Basic Research Lab Program through National Research Foundation of Korea (NRF) - Korea government (MSIP) [2020R1A4A2002806, 2019M3F3A1A01074451, 2018R1A2A2A05020475, 2016M3A7B4910426]
- Institute for Information & Communication Technology Planning & Evaluation (IITP), Republic of Korea [2019M3F3A1A01074451] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2018R1A2A2A05020475] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Recently, combinations of 2D van der Waals (2D vdW) materials and organic materials have attracted attention because they facilitate the formation of various heterojunctions with excellent interface quality owing to the absence of dangling bonds on their surface. In this work, a double negative differential resistance (D-NDR) characteristic of a hybrid 2D vdW/organic tunneling device consisting of a hafnium disulfide/pentacene heterojunction and a 3D pentacene resistor is reported. This D-NDR phenomenon is achieved by precisely controlling an NDR peak voltage with the pentacene resistor and then integrating two distinct NDR devices in parallel. Then, the operation of a controllable-gain amplifier configured with the D-NDR device and an n-channel transistor is demonstrated using the Cadence Spectre simulation platform. The proposed D-NDR device technology based on a hybrid 2D vdW/organic heterostructure provides a scientific foundation for various circuit applications that require the NDR phenomenon.
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