期刊
ADVANCED SCIENCE
卷 7, 期 13, 页码 -出版社
WILEY
DOI: 10.1002/advs.201903400
关键词
III-nitride semiconductors; spin dynamics; spin-orbit coupling; time-resolved Kerr rotation
资金
- National Key Research and Development Program of China [2018YFB0406603, 2018YFE0125700, 2016YFA0301202]
- National Natural Science Foundation of China [61574006, 61522401, 61927806, 61521004, 11634002, 11674311]
- K. C. Wong Education Foundation, China
III-nitride wide bandgap semiconductors are favorable materials for developing room temperature spintronic devices. The effective manipulation of spin dynamics is a critical request to realize spin field-effect transistor (FET). In this work, the dependence of the spin relaxation time on external strain-induced polarization electric field is investigated in InGaN/GaN multiple quantum wells (MQWs) by time-resolved Kerr rotation spectroscopy. Owing to the almost canceled two different spin-orbit coupling (SOC), the spin relaxation time as long as 311 ps in the MQWs is obtained at room temperature, being much longer than that in bulk GaN. Furthermore, upon applying an external uniaxial strain, the spin relaxation time decreases sensitively, which originates from the breaking of the SU(2) symmetry. The extracted ratio of the SOC coefficients shows a linear dependence on the external strain, confirming the essential role of the polarization electric field. This effective manipulation of the spin relaxation time sheds light on GaN-based nonballistic spin FET working at room temperature.
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