相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm
Towhidur Razzak et al.
APPLIED PHYSICS LETTERS (2020)
A critical review of recent progress on negative capacitance field-effect transistors
Muhammad A. Alam et al.
APPLIED PHYSICS LETTERS (2019)
Ferroelectric negative capacitance
Jorge Iniguez et al.
NATURE REVIEWS MATERIALS (2019)
Steep Subthreshold Swing in GaN Negative Capacitance Field-Effect Transistors
Wenjing Song et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
Ferroelectric Gate AlGaN/GaN E-Mode HEMTs With High Transport and Sub-Threshold Performance
Jiejie Zhu et al.
IEEE ELECTRON DEVICE LETTERS (2018)
High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications
Chia-Hsun Wu et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates
Hareesh Chandrasekar et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
ß-Ga2O3 Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications
Mengwei Si et al.
ACS OMEGA (2017)
Revisiting the Theory of Ferroelectric Negative Capacitance
Kausik Majumdar et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating
Xinke Liu et al.
SCIENTIFIC REPORTS (2015)
Experimental Demonstration of Ferroelectric Gate-Stack AlGaN/GaN-on-Si MOS-HEMTs With Voltage Amplification for Power Applications
P. -G. Chen et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2014)
Polarization and interface charge coupling in ferroelectric/AlGaN/GaN heterostructure
Min Zhang et al.
APPLIED PHYSICS LETTERS (2012)
Normally-off characteristics of LiNbO3/AlGaN/GaN ferroelectric field-effect transistor
L. Z. Hao et al.
THIN SOLID FILMS (2012)
Capacitance-voltage modeling of metal-ferroelectric-semiconductor capacitors based on epitaxial oxide heterostructures
Woong Choi et al.
APPLIED PHYSICS LETTERS (2011)
Modulation of 2DEG in AlGaN/GaN heterostructures by P(VDF-TrFE)
Ze-gao Wang et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2011)
Can we enhance two-dimensional electron gas from ferroelectric/GaN heterostructures?
Jihua Zhang et al.
JOURNAL OF APPLIED PHYSICS (2010)
Hysteresis behaviors of barium titanate single crystals based on the operation of multiple 90° switching systems
J. Shieh et al.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS (2009)
Use of negative capacitance to provide voltage amplification for low power nanoscale devices
Sayeef Salahuddin et al.
NANO LETTERS (2008)
Ferroelectric polymer gate on AlGaN/GaN heterostructures
L. Malin et al.
JOURNAL OF APPLIED PHYSICS (2007)
Fabrication and current-voltage characterization of a ferroelectric lead zirconate titanate/AlGaN/GaN field effect transistor
YS Kang et al.
APPLIED PHYSICS LETTERS (2006)
A study on current collapse in AlGaN/GaN HEMTs induced by bias stress
T Mizutani et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2003)
分享论文
