Low-Dimensional Hybrid Perovskites for Field-Effect Transistors with Improved Stability: Progress and Challenges

Hybrid perovskites have attracted considerable attention due to their excellent optoelectronic properties and facile processing. Beyond their wide usage in various energy-related devices and optoelectronic applications, in particular photovoltaic cells, these materials have also been employed as active candidates in field-effect transistors (FETs). However, the low stability of these materials is still a substantial challenge for their applications and commercialization. Low-dimensional (two- or quasi-two-) perovskites, which are formed by introducing larger organic amine groups into the perovskite structure, not only offer great potential for the development of high stability devices, but also achieve higher field-effect mobility due to the low ion migrations at room temperature. To date, the emerging low-dimensional perovskite FETs have already gained unprecedented developments. This review mainly summarizes and evaluates the recent progress on low-dimensional perovskite FETs and proposes solutions for the possible challenges. First, along with the detailed comparisons, the advantages of low-dimensional perovskites that can overcome the demerits of conventional 3D perovskites for FETs are presented in detail. Thereafter, the achievements and development of low-dimensional perovskite-based FETs are briefly reviewed, followed by the discussion of field-effect mobility and other challenges and opportunities of low-dimensional perovskites for FETs. Finally, a summary and outlook are given.