期刊
PHYSICAL REVIEW APPLIED
卷 14, 期 1, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevApplied.14.014073
关键词
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资金
- National Natural Science Foundation of China [51632005, 51572167, 11929401]
- National Key Research and Development Program of China [2017YFB0701600]
- US-NSF [DMR-1506669, DMREF-1626967]
- Guangdong Innovation Research Team Project [2017ZT07C062]
- Guangdong Provincial Key-Lab program [2019B030301001]
- Shenzhen Municipal Key-Lab program [ZDSYS20190902092905285]
- Shenzhen Pengcheng-Scholarship Program
Layer-dependent electronic and structural properties of emerging graphitic carbon-boron compound C3B are investigated using both density-functional theory and the GW approximation. We discover that, in contrast to a moderate quasiparticle band gap of 2.55 eV for monolayer C3B, the calculated quasipar-ticle band gap of perfectly stacked bulk phase C3B is as small as 0.17 eV. Therefore, our results suggest that layered material C3B exhibits a remarkably large band-gap renormalization of over 2.3 eV due to the interlayer coupling and screening effects, providing a single material with an extraordinary band-gap tunability. The quasiparticle band gap of monolayer C3B is also over 1.0 eV larger than that of C3N, a closely related two-dimensional semiconductor. Detailed inspections of the near-edge electronic states reveal that the conduction-and valence-band edges of C3B are formed by out-of-plane and in-plane elec-tronic states, respectively, suggesting an interesting possibility of tuning the band edges of such layered material separately by modulating the in-plane and out-of-plane interactions.
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