期刊
ADVANCED MATERIALS INTERFACES
卷 7, 期 16, 页码 -出版社
WILEY
DOI: 10.1002/admi.202000474
关键词
chemical vapor deposition (CVD); layered materials; nanowires; resistive random-access memory (RRAM); SnSe
资金
- Science Foundation Ireland [18/IF/6324, 12/RC/2278, 14/IA/2513, 16/IA/4462]
- Engineering and Physical Sciences Research Council [EP/M50662X/1, EP/N509747/1]
- European Research Council [321160]
- Science Foundation Ireland (SFI) [16/IA/4462] Funding Source: Science Foundation Ireland (SFI)
Here the controlled growth of SnSe nanowires by a liquid injection chemical vapor deposition (CVD) method employing a distorted octahedral [SnCl4{(BuSe)-Bu-n(CH2)(3)(SeBu)-Bu-n}] single-source diselenoether precursor is reported. CVD with this single-source precursor allows morphological and compositional control of the SnSex nanostructures formed, including the transformation of SnSe2 nanoflakes into SnSe nanowires and again to SnSe nanoflakes with increasing growth temperature. Significantly, highly crystalline SnSe nanowires with an orthorhombic Pnma 62 crystal structure can be controllably synthesized in two growth directions, either or . The ability to tune the growth direction of SnSe will have important implications for devices constructed using these nanocrystals. The SnSe nanowires with a growth direction display a reversible polarity-dependent memory switching ability, not previously reported for nanoscale SnSe. A resistive switching on/off ratio of 10(3) without the use of a current compliance limit is seen, illustrating the potential use of SnSe nanowires for low-power nonvolatile memory applications.
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