期刊
ACS PHOTONICS
卷 7, 期 8, 页码 2228-2235出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.0c00764
关键词
semipolar GaN; micro light-emitting diode; visible light communication; high bandwidth
类别
资金
- Ministry of Science and Technology, Taiwan (MOST) [MOST 107-2221-E-009-113-MY3, 108-2221-E-009-113-MY3, 109-2124-M-009-101-]
- National Natural Science Foundation of China [11904302]
- Major Science and Technology Project of Xiamen, China [3502Z20191015]
The light-emitting diode (LED) is among promising candidates of light sources in visible light communication (VLC); however, strong internal polarization fields in common c-plane LEDs, especially green LEDs, result in low frequency and limited transmission performance. This study aims to overcome the limited 3-dB bandwidth of long-wavelength InGaN/GaN LEDs. Thus, semipolar (20-21) micro-LEDs (mu LEDs) were fabricated through several improved approaches on epitaxy and chip processes. The mu LED exhibits a 525 nm peak wavelength and good polarization performance. The highest 3-dB bandwidth up to 756 MHz and 1.5 Gbit/s data rate was achieved under a current density of 2.0 kA/cm(2). These results suggest a good transmission capacity of green semipolar (20-21) mu LEDs in VLC applications.
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