4.6 Article

High-Bandwidth Green Semipolar (20-21) InGaN/GaN Micro Light-Emitting Diodes for Visible Light Communication

期刊

ACS PHOTONICS
卷 7, 期 8, 页码 2228-2235

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.0c00764

关键词

semipolar GaN; micro light-emitting diode; visible light communication; high bandwidth

资金

  1. Ministry of Science and Technology, Taiwan (MOST) [MOST 107-2221-E-009-113-MY3, 108-2221-E-009-113-MY3, 109-2124-M-009-101-]
  2. National Natural Science Foundation of China [11904302]
  3. Major Science and Technology Project of Xiamen, China [3502Z20191015]

向作者/读者索取更多资源

The light-emitting diode (LED) is among promising candidates of light sources in visible light communication (VLC); however, strong internal polarization fields in common c-plane LEDs, especially green LEDs, result in low frequency and limited transmission performance. This study aims to overcome the limited 3-dB bandwidth of long-wavelength InGaN/GaN LEDs. Thus, semipolar (20-21) micro-LEDs (mu LEDs) were fabricated through several improved approaches on epitaxy and chip processes. The mu LED exhibits a 525 nm peak wavelength and good polarization performance. The highest 3-dB bandwidth up to 756 MHz and 1.5 Gbit/s data rate was achieved under a current density of 2.0 kA/cm(2). These results suggest a good transmission capacity of green semipolar (20-21) mu LEDs in VLC applications.

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