期刊
AIP ADVANCES
卷 10, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/5.0010730
关键词
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资金
- Institute for Basic Science of Korea [IBS-R011-D1]
- Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT, and Future Planning [2016M3D1A1919181]
- National Research Foundation of Korea [2016M3D1A1919181, IBS-R011-D1-2020-A00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Generation of spin-charge coupling by doping semiconductors with magnetic dopants is a promising approach for gate-tunable spintronic devices without applying an external magnetic field. Here, we demonstrate that the magnetic orders in V-doped WSe2 can be modulated by tuning carrier densities using ab initio calculations. We found that at a low V-doping concentration limit, the long-range ferromagnetic order is enhanced by increasing the hole density. In contrast, this long-range ferromagnetic order is suppressed at high electron density by compensating the p-type V dopant, originating from the strong localized antiferromagnetic coupling between V and W atoms and between V and Se atoms. The hole-mediated long-range magnetic exchange is similar to 70 meV, thus strongly suggesting the ferromagnetism in V-doped WSe2 at room temperature. Our findings on strong coupling between charge and spin order in V-doped WSe2 provide plenty of room for multifunctional gate-tunable spintronics.
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