期刊
NATURE COMMUNICATIONS
卷 11, 期 1, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/s41467-020-17481-1
关键词
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资金
- European Union [696656, 785219, 881603]
- Swedish Research Council VR [2016-03658, 2015-06813]
- EU
- VINNOVA 2D Tech competence center
- Graphene center
- EI Nano program at Chalmers University of Technology
- Chalmers University of Technology
- Swedish Research Council [2015-06813, 2016-03658] Funding Source: Swedish Research Council
Unique electronic spin textures in topological states of matter are promising for emerging spin-orbit driven memory and logic technologies. However, there are several challenges related to the enhancement of their performance, electrical gate-tunability, interference from trivial bulk states, and heterostructure interfaces. We address these challenges by integrating two-dimensional graphene with a three-dimensional topological insulator (TI) in van der Waals heterostructures to take advantage of their remarkable spintronic properties and engineer proximity-induced spin-charge conversion phenomena. In these heterostructures, we experimentally demonstrate a gate-tunable spin-galvanic effect (SGE) at room temperature, allowing for efficient conversion of a non-equilibrium spin polarization into a transverse charge current. Systematic measurements of SGE in various device geometries via a spin switch, spin precession, and magnetization rotation experiments establish the robustness of spin-charge conversion in the Gr-TI heterostructures. Importantly, using a gate voltage, we reveal a strong electric field tunability of both amplitude and sign of the spin-galvanic signal. These findings provide an efficient route for realizing all-electrical and gatetunable spin-orbit technology using TIs and graphene in heterostructures, which can enhance the performance and reduce power dissipation in spintronic circuits.
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