A bilateral interfacial passivation strategy promoting efficiency and stability of perovskite quantum dot light-emitting diodes

Perovskite quantum-dot-based light-emitting diodes (QLEDs) possess the features of wide gamut and real color expression, which have been considered as candidates for high-quality lightings and displays. However, massive defects are prone to be reproduced during the quantum dot (QD) film assembly, which would sorely affect carrier injection, transportation and recombination, and finally degrade QLED performances. Here, we propose a bilateral passivation strategy through passivating both top and bottom interfaces of QD film with organic molecules, which has drastically enhanced the efficiency and stability of perovskite QLEDs. Various molecules were applied, and comparison experiments were conducted to verify the necessity of passivation on both interfaces. Eventually, the passivated device achieves a maximum external quantum efficiency (EQE) of 18.7% and current efficiency of 75cdA(-1). Moreover, the operational lifetime of QLEDs is enhanced by 20-fold, reaching 15.8h. These findings highlight the importance of interface passivation for efficient and stable QD-based optoelectronic devices. Perovskite quantum-dots are promising candidates for light-emitting diodes but the defects limit the device performance. Here Xu et al. show a passivation strategy to reduce the defect density at both interfaces, which increases the external quantum efficiency (EQE) and lifetime by more than 2-fold and 20-fold, respectively.